Utilizing essentially the most superior GaN manufacturing know-how out there at this time, Aizu, Japan, is now the corporate’s second manufacturing unit to provide a whole portfolio of GaN-based energy semiconductors
NEWS HIGHLIGHTS:
- TI provides GaN manufacturing in Japan, quadrupling its inner GaN manufacturing capability between its factories in the USA and Japan.
- TI’s GaN-based semiconductors are in manufacturing and out there now.
- TI permits essentially the most energy-efficient, dependable and power-dense finish merchandise with the widest portfolio of built-in GaN-based energy semiconductors.
- TI has efficiently piloted the event of GaN manufacturing on 300mm wafers.
Texas Devices has introduced it has begun manufacturing of gallium nitride (GaN)-based energy semiconductors at its manufacturing unit in Aizu, Japan. Coupled with its current GaN manufacturing in Dallas, Texas, TI will now internally manufacture 4 occasions extra GaN-based energy semiconductors, as Aizu ramps to manufacturing.
“Constructing on greater than a decade of experience in GaN chip design and manufacturing, we’ve efficiently certified our 200mm GaN know-how – essentially the most scalable and cost-competitive option to manufacture GaN at this time – to start out mass manufacturing in Aizu,” mentioned Mohammad Yunus, TI’s senior vp of Know-how and Manufacturing. “This milestone permits us to fabricate extra of our GaN chips internally as we develop our inner manufacturing to greater than 95% by 2030, whereas additionally sourcing from a number of TI areas, guaranteeing a dependable provide of our complete GaN portfolio of high-power, energy-efficient semiconductors.”
The facility of GaN know-how
An alternative choice to silicon, GaN is a semiconductor materials that gives advantages in energy-efficiency, switching velocity, energy answer dimension and weight, total system value, and efficiency below excessive temperatures and high-voltage circumstances. GaN chips present extra energy density, or energy in smaller areas, enabling functions corresponding to energy adapters for laptops and cellphones, or smaller, extra energy-efficient motors for heating and air con programs and residential home equipment.
At the moment, TI presents the widest portfolio of built-in GaN-based energy semiconductors, starting from low- to high-voltage, to allow essentially the most energy-efficient, dependable and power-dense electronics.
“With GaN, TI can ship extra energy, extra effectively in a compact house, which is the first market want driving innovation for a lot of of our clients,” mentioned Kannan Soundarapandian, vp of Excessive-Voltage Energy at TI. “As designers of programs corresponding to server energy, photo voltaic power technology and AC/DC adapters face challenges to scale back energy consumption and improve power effectivity, they’re more and more demanding a dependable provide of TI’s high-performance GaN-based chips. TI’s product portfolio of built-in GaN energy phases permits clients to realize increased energy density, improved ease of use and decrease system value.”
Additional, with the corporate’s proprietary GaN-on-silicon course of, greater than 80 million hours of reliability testing, and built-in safety options, TI GaN chips are designed to maintain high-voltage programs protected.
Most superior GaN manufacturing know-how out there at this time
Utilizing essentially the most superior gear out there for GaN chip manufacturing at this time, TI’s new capability permits elevated product efficiency and manufacturing course of effectivity, in addition to a price benefit.
Additionally, the extra superior, environment friendly instruments utilized in TI’s expanded GaN manufacturing can produce smaller chips, packing much more energy. This design innovation may be manufactured utilizing much less water, power and uncooked supplies, and finish merchandise that use GaN chips get pleasure from these identical environmental advantages.
Scaled for future advances
The efficiency advantages of TI’s added GaN manufacturing additionally allow the corporate to scale its GaN chips to increased voltages, beginning with 900V and growing to increased voltages over time, furthering power-efficiency and dimension improvements for functions like robotics, renewable power and server energy provides.
As well as, TI’s expanded funding features a profitable pilot earlier this 12 months for growth of GaN manufacturing processes on 300mm wafers. Additional, TI’s expanded GaN manufacturing processes are absolutely transferable to 300mm know-how, positioning the corporate to readily scale to buyer wants and transfer to 300mm sooner or later.
Dedicated to accountable, sustainable manufacturing
Increasing provide and innovation in GaN know-how is the newest instance of TI’s dedication to accountable, sustainable manufacturing. TI has dedicated to make use of 100% renewable electrical energy in its U.S. operations by 2027, and worldwide by 2030.
