
Ferrimagnetic Heusler tunnel junctions with quick spin-transfer torque switching enabled by low magnetization
Launch, S. P. Samsung reveals eMRAM and BCD roadmap whereas pushing automotive chip all the way down to 2 nm. https://www.digitimes.com/information/a20231020PD215/automotive-ic-ev-memory-chips-samsung.html (2023). Parkin, S. S. P. et al. Large tunnelling magnetoresistance at room temperature with MgO (100) tunnel limitations. Nat. Mater. 3, 862 (2004). Article CAS PubMed Google Scholar Yuasa, S., Nagahama, T., Fukushima, A.,…