Tellurium nanowires present potential for room-temperature ferroelectricity and knowledge storage

A discovery by a global group of scientists has revealed room-temperature ferroelectric and resistive switching behaviors in single-element tellurium (Te) nanowires, paving the best way for developments in ultrahigh-density knowledge storage and neuromorphic computing.

Revealed in Nature Communications, this analysis marks the first experimental proof of ferroelectricity in Te nanowires, a single-element materials, which was beforehand predicted solely in theoretical fashions.

“Ferroelectric supplies are substances that may retailer electrical cost and preserve it even when the ability is turned off, and their cost will be switched by making use of an exterior electrical subject—a attribute important for non-volatile reminiscence purposes,” factors out co-corresponding writer of the paper Professor Yong P. Chen, a principal investigator at Tohoku College’s Superior Institute for Supplies Analysis (AIMR) and a professor at Purdue and Aarhus Universities.

Whereas ferroelectricity is frequent in compounds, single-element supplies like Te hardly ever exhibit this conduct attributable to their symmetric atomic buildings.

Nevertheless, Chen and his colleagues demonstrated that Te nanowires exhibit sturdy ferroelectric properties at room temperature, due to the distinctive atomic displacement inside their one-dimensional chain construction. The invention was made utilizing piezoresponse drive microscopy (PFM) and high-resolution scanning transmission electron microscopy.

Constructing on this discovery, the group developed a novel gadget—a self-gated ferroelectric field-effect transistor (SF-FET)—which integrates each ferroelectric and semiconducting properties in a single gadget. The SF-FET demonstrates distinctive knowledge retention, quick switching speeds of lower than 20 nanoseconds, and a powerful storage density exceeding 1.9 terabytes per sq. centimeter.

“Our breakthrough opens up new alternatives for next-generation reminiscence gadgets, the place Te nanowires’ excessive mobility and distinctive digital properties might assist simplify gadget architectures,” says Yaping Qi, an assistant professor at AIMR and co-first writer of the research.

“Our SF-FET gadget might additionally play a vital position in future synthetic intelligence programs, enabling neuromorphic computing that mimics human mind operate. Moreover, the findings may help result in decrease energy consumption in digital gadgets, addressing the necessity for sustainable expertise.”

At present, the group at AIMR, which contains Qi and Chen, is exploring new 2D, ferroelectric supplies utilizing synthetic intelligence (AI) strategies, in collaboration with Professor Hao Li’s group. This might result in the invention of extra supplies with promising ferroelectric properties or additional purposes past reminiscence storage, equivalent to neuromorphic computing.